Bipolar resistive switching behaviour in Mn0.03Zn0.97O/amorphous\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mathr

Hua Wang,Qisong Chen,Jiwen Xu,Xiaowen Zhang,Shuaishuai Yan

DOI: https://doi.org/10.1007/s12034-017-1451-8

IF: 1.878

2017-01-01

Bulletin of Materials Science

Abstract:Mn0.03Zn0.97O\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Mn}_{0.03}\hbox {Zn}_{0.97}\hbox {O}$$\end{document} (MZO)/amorphous La0.7Zn0.3MnO3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {La}_{0.7}\hbox {Zn}_{0.3}\hbox {MnO}_{3}$$\end{document} (LZMO) heterostructures were deposited on p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {p}^{+}\hbox {-Si}$$\end{document} substrates through sol–gel spin coating. Ag/MZO/LZMO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}$$\end{document} and Ag/LZMO/MZO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}$$\end{document} devices exhibit a bipolar, reversible and remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS) to that at low-resistance state (LRS) (RHRS/RLRS\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{\mathrm{HRS}}/R_{\mathrm{LRS}}$$\end{document}) in the Ag/LZMO/MZO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}$$\end{document} device is approximately five orders of magnitude, and is maintained after over 103\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$10^{3}$$\end{document} successive switching cycles or over a period of 2×106s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$2\times 10^{6}\hbox { s}$$\end{document}, indicating good endurance property and retention characteristics. Conversely, the ratio in the Ag/MZO/LZMO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}$$\end{document} device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.