Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol–gel process

Lun-Quan Wang,Wen-Hua Li,Xin-Gui Tang,Xiao-Bin Guo,Qiu-Xiang Liu,Yan-Ping Jiang,Zhen-Hua Tang

DOI: https://doi.org/10.1016/j.ceramint.2020.10.146

IF: 5.532

2021-02-01

Ceramics International

Abstract:Herein, PbZrO3 (PZO) films with good density and homogeneity were grown on a LaNiO3 (LNO)-buffered Si(100) substrate by a conventional and low-cost sol–gel spin-coating technique. The results indicated that the PZO films prepared on the LNO/Si substrate can be fabricated into a Au/PZO/LNO/Si heterojunction device via annealing at 650 °C under an air atmosphere. The device exhibited excellent and repeatable bipolar resistance switching (RS) behavior at room temperature. Its high/low resistance ratio reached 102 at +0.2 and -0.2 V bias voltages, and the RS characteristics of the device did not significantly deteriorate after 100 consecutive cycles of testing. Weibull distribution results show that the proposed device has a uniform and stable high/low-resistance state. Furthermore, we demonstrated that the conduction mechanisms of the device are Ohmic conduction and Schottky emission. The modulation of a Schottky-like barrier owing to the migration of oxygen vacancies in the PZO films is considered to be responsible for the RS phenomenon of the Au/PZO/LNO/Si device.

materials science, ceramics