Bipolar Resistive Switching Characteristics Of Low Temperature Grown Zno Thin Films By Plasma-Enhanced Atomic Layer Deposition

jian zhang,hui yang,qilong zhang,shurong dong,j k luo

DOI: https://doi.org/10.1063/1.4774400

IF: 4

2013-01-01

Applied Physics Letters

Abstract:ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10(3), better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774400]