Resistive Switching Mechanism In Silicon Highly Rich Siox (X < 0.75) Films Based On Silicon Dangling Bonds Percolation Model

yuefei wang,xinye qian,kunji chen,zhonghui fang,wei li,jun xu

DOI: https://doi.org/10.1063/1.4776695

IF: 4

2013-01-01

Applied Physics Letters

Abstract:The unipolar resistive switches are investigated in silicon highly rich SiOx (x < 0.75) films. The as-deposited SiO0.73 films contain high concentration (1.0 x 10(19) cm(-3)) of silicon dangling bonds (Si-DBs) and are rich in SiO2 Si-Si and O-3 Si-Si configurations. Unlike the currently reported normal silicon-rich SiOx (x>1.8) based devices, our Pt/SiO0.73/Pt devices operate at lower voltage regime (<2.0 V) and exhibit much lower resistance (similar to 30 Omega). The reset voltage (similar to 0.7 V) is lower than set voltage (similar to 1.7 V) and the performance is reduced in the vacuum environment. We propose a Si-DBs percolation model to explain the above characteristics. The experimental evidences for supporting our model are presented and discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776695]