Abstract:In this letter, the back-end of line (BEOL) compatible H 0.5 Z 0.5 O 2 /ZrO 2 /H 0.5 Z 0.5 O 2 stack was designed for enhancing both the ferroelectricity and reliability under low-voltage operation. Compared to the conventional H 0.5 Z 0.5 O 2 (HZO) film, the HZO/ZrO 2 /HZO stack exhibits superior remnant polarization (2 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P r ) of 39.6 μC/cm 2 and 53.8 μC/cm 2 under 2 MV/cm and 4 MV/cm, respectively. By integrating ZrO 2 middle layer (ML) into HZO films, robust reliability was achieved, including a large breakdown electric field of 2.73 MV/cm in 10-year time-dependent dielectric breakdown (TDDB) lifetime, as well as excellent endurance characteristic with a 2 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P r of 38.04 μC/cm 2 after 4.34×10 9 cycles at 2 MV/cm and no breakdown after 6×10 10 fatigue cycles at 1.5 MV/cm. It is believed that ZrO 2 ML could introduce additional strain at a low annealing temperature below 350 °C and improve the proportion of the ferroelectric phase in the HZO/ZrO 2 /HZO stack. The HZO/ZrO 2 /HZO stack with low-voltage operation shows the great potential for BEOL-compatible non-volatile memory applications.

Back-End of Line Compatible Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/ZrO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Stack Achieving 2<italic>P</italic><sub>r</sub> of 39.6 μC/cm<sup>2</sup> and Endurance Exceeding 10<sup>10</sup> Cycles under Low-Voltage Operation

Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2P R of 39.6 Μc/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Back-End of Line Compatible Hf 0.5 Zr 0.5 O 2 with ZrO 2 Seed Layer for Enhanced Ferroelectricity

Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays