Abstract:Mn0.03Zn0.97O\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Mn}_{0.03}\hbox {Zn}_{0.97}\hbox {O}$$\end{document} (MZO)/amorphous La0.7Zn0.3MnO3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {La}_{0.7}\hbox {Zn}_{0.3}\hbox {MnO}_{3}$$\end{document} (LZMO) heterostructures were deposited on p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {p}^{+}\hbox {-Si}$$\end{document} substrates through sol–gel spin coating. Ag/MZO/LZMO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}$$\end{document} and Ag/LZMO/MZO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}$$\end{document} devices exhibit a bipolar, reversible and remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS) to that at low-resistance state (LRS) (RHRS/RLRS\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{\mathrm{HRS}}/R_{\mathrm{LRS}}$$\end{document}) in the Ag/LZMO/MZO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}$$\end{document} device is approximately five orders of magnitude, and is maintained after over 103\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$10^{3}$$\end{document} successive switching cycles or over a period of 2×106s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$2\times 10^{6}\hbox { s}$$\end{document}, indicating good endurance property and retention characteristics. Conversely, the ratio in the Ag/MZO/LZMO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}$$\end{document} device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

Fabrication and Properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructure Devices

Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O 4 /p + -Si Heterostructure Devices for Nonvolatile Memory Applications

Bipolar Resistive Switching Behaviour in $$\mathrm{mn}_{0.03}\mathrm{zn}_{0.97}{\hbox {o/amorphous}}$$ Mn 0.03 Zn 0.97 O/amorphous $$\mathrm{la}_{0.7}\mathrm{zn}_{0.3}\mathrm{mno}_{3}$$ La 0.7 Zn 0.3 MnO 3 Heterostructure Films

Bipolar Resistive Switching Effects with Self-Compliance and Multilevel Storage Characteristics in Ag/MgZnO/Si Structures

Study on the Resistance Switching Properties of Ag/La0.67Ca0.33MnO3/P+-Si Sandwich Devices

Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated Through Sol—Gel Method

Low Temperature Synthesis of Amorphous La 0.7 Zn 0.3 MnO 3 Films Grown on P + -Si Substrates and Its Resistive Switching Properties

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device

Bipolar resistive switching behaviour in Mn0.03Zn0.97O/amorphous\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mathr

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Colossal resistive switching behavior and its physical mechanism of Pt/ p -NiO/ n -Mg 0.6 Zn 0.4 O/Pt thin films

Unipolar Resistive Switching in Au/Cr/Mg0.84Zn0.16O2−δ /P+-Si

Resistive Switching Behavior of Ag/La0.67Sr0.33MnO3/Pt Heterostructures

Effects of Zn Doping Concentration on Resistive Switching Characteristics in Ag /la1−x Zn X MnO 3 / P + $_{3}/\textit {p}^{\mathrm {+}}$ -Si Devices

Effects of Zn doping concentration on resistive switching characteristics in Ag /La 1− x Zn x MnO _3/p^+ -Si devices

Resistive Switching Behavior of Pt/Mg0.2zn0.8o/Pt Devices for Nonvolatile Memory Applications

Point Contact Bipolar Resistive Switching Observed in Transparent ZnMgO/ZnO:Ga Heterostructure

Polarization-induced Resistive Switching Behaviors in Complex Oxide Heterostructures

Improvement of Resistive Switching Property in a Noncrystalline and Low-Resistance La0.7Ca0.3MnO3thin Film by Using an Ag–Al Alloy Electrode

Bipolar Resistive Switching Behaviours in Znmn2o4 Film Deposited on P(+)-Si Substrate by Chemical Solution Deposition

Nonvolatile resistive switching in lead-free La2CoMnO6-based memory device