Abstract:Resistive random access memories (RRAMs) have attracted tremendous attention due to their miniaturized size, low power consumption, high response speed, and simple fabrication requirements, which are regarded as a promising candidate for future nonvolatile memories. However, the traditional binary storage RRAMs fail to meet the high-density requirement in the area of big data. One of the ways to overcome this obstacle is to realize multilevel state transitions in a unit RRAM. Herein, we propose a facile spin-coating method to develop a multilevel RRAM based on Al/poly(methyl methacrylate) (PMMA)/ZnO quantum dots (QDs)/PMMA/ZnO QDs/PMMA/fluorine-doped tin oxide (FTO) structure, with the significant merits of typical forming-free bipolar resistive switching behavior, low-power operating voltage, stable endurance, and excellent retention. In specific, the ON/OFF ratio of the proposed ZnO QDs-based device can be adjusted by tuning the concentration of the ZnO QDs. Moreover, a multilevel RRAM performance with distinct four-level resistance states is obtained by varying the compliance current, which demonstrates that the proposed device has a specific application in multilevel data storage. The conductive filament model, combining the enhanced internal field and robust formation of the conductive filament, is introduced to explain the mechanism of the resistive switching behavior and multilevel performance. This work paves a new way for its prospect in constructing high-density data storage RRAMs.

Bipolar Resistive Switching Effects with Self-Compliance and Multilevel Storage Characteristics in Ag/MgZnO/Si Structures

Fabrication and Properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructure Devices

Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O 4 /p + -Si Heterostructure Devices for Nonvolatile Memory Applications

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device

Bipolar Resistive Switching Behaviour in $$\mathrm{mn}_{0.03}\mathrm{zn}_{0.97}{\hbox {o/amorphous}}$$ Mn 0.03 Zn 0.97 O/amorphous $$\mathrm{la}_{0.7}\mathrm{zn}_{0.3}\mathrm{mno}_{3}$$ La 0.7 Zn 0.3 MnO 3 Heterostructure Films

Bipolar Resistive Switching With Self-Rectifying Effects In Al/Zno/Si Structure

Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated Through Sol—Gel Method

Stabilizing Resistive Switching Performances of TiN/MgZnO/ZnO/Pt Heterostructure Memory Devices by Programming the Proper Compliance Current

Realizing Multimode of Resistive Switching in Single Ag/SiO2/Pt Device Via Tuning Forming Compliance Current

Bipolar Resistive Switching with Self-Rectifying Behaviors in P-Type AgCr1−xMgxO2 Thin Films

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Stable Resistive Switching in ZnO/PVA:MoS<sub>2</sub> Bilayer Memristor

Comparative investigation of unipolar resistance switching effect of Pt/Mg 0.6 Zn 0.4 O/Pt devices with different electrode patterns for nonvolatile memory application

Unipolar Resistive Switching Effects Based on Al/ZnO/P ++ -Si Diodes for Nonvolatile Memory Applications

Colossal resistive switching behavior and its physical mechanism of Pt/ p -NiO/ n -Mg 0.6 Zn 0.4 O/Pt thin films

Light-modulated Resistive Switching Memory Behavior in ZnO/BaTiO3/ZnO Multilayer

Unipolar Resistive Switching in Au/Cr/Mg0.84Zn0.16O2−δ /P+-Si

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

Voltage-Controlled Bistable Resistive Switching Behavior Based On Ni0.5zn0.5fe2o4/Bifeo3/Nb:Srtio3 Heterostructures

Multimode Resistive Switching in Single ZnO Nanoisland System.

Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(MgNb)TiO heterostructures at room temperature.