Nanocrystalline Silicon Thin Films Deposited by Low-Temperature RF Sputtering Process and Hetrojunction Solar Cell

赵占霞,崔容强,赵百川,孟凡英,于化丛,陈凤翔,周之斌
DOI: https://doi.org/10.3969/j.issn.1002-0322.2004.05.003
IF: 4
2004-01-01
Vacuum
Abstract:Presents some investigation results of nanocrystalline silicon thin films deposited on p-type silicon substrates by RF sputtering process at low temperature or 100℃ in the working gas (H_2+Ar) of which the H_2 partial pressure was controlled in a range from 31% to 73% with the time for film deposition changed correspondingly. A combination of Raman spectroscopy, XRD, SEM and ellipsometry with atomic force microscopy (AFM) was used to characterize the films. An important result shown by the XRD is that the film has a new microstructure different from that of the films deposited by other PECVD processes and the ellipsomentry shows the wide gaps between light bands. The electrical properties of the heterojunction (nc-Si:H/c-Si) solar cell made with such thin film were measured at room temperature.
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