A Novel Power Mixer for NB-IoT Transmitter in 65-Nm CMOS

Xiaodong You,Haigang Feng,Xinpeng Xing,Zhihua Wang
DOI: https://doi.org/10.1109/edssc.2018.8487106
2018-01-01
Abstract:NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and class-AB power amplifier functions in single stage. Such novel structure achieves low power operation and high linearity with literary half of the layout area comparing with the 2-stages approach. From post layout simulation, 3dBm output power is delivered to 50Ω load with 16mA under 2.5V supply. Its in-band emission is less than -57dBc. The drawing area is 0.27mm 2 in a commercial 65-nm CMOS process.
What problem does this paper attempt to address?