A K-Band High-Gain and Low-Noise Folded CMOS Mixer Using Current-Reuse and Cross-Coupled Techniques
Yao Peng,Jin He,Haomin Hou,Hao Wang,Sheng Chang,Qijun Huang,Yinxia Zhu
DOI: https://doi.org/10.1109/access.2019.2941048
IF: 3.9
2019-01-01
IEEE Access
Abstract:A high-gain and low-noise folded down-conversion mixer for K-band applications is presented in this paper. Benefited from the folded double-balanced architecture, the transconductance (g(m)) stage and the switch stage of the mixer can operate in-different bias conditions, providing a great freedom to optimize the two stages for noise reduction. By exploiting current-reuse and cross-coupled techniques, the conversion gain (CG) and noise figure (NF) of the mixer can be significantly improved. The proposed mixer has been designed and fabricated for verification in a 130-nm RF CMOS. Measured over the RF bandwidth from 23 to 25 GHz, the mixer achieves a maximum CG of 26.1 dB and a minimum NF of 7.7 dB under a local oscillator (LO) power of -3 dBm. The input 1-dB compression point (P-1dB) is -17.8 dBm at RF frequency of 24 GHz. From 23 to 25 GHz, the LO-to-RF, LO-to-IF, and RF-to-LO isolations are better than 58 dB, 51 dB, and 43 dB, respectively. With a 1.5-V supply voltage, the mixer consumes an overall dc power of 16.8 mW. These measurement results clearly demonstrate that the proposed mixer has potential to be used in highly-integrated K-band CMOS radios.