Abstract:This paper proposes a transformer-based broadband low-noise amplifier (LNA) for millimeter-wave application. The proposed LNA has four common-source stages. Three transformers are used to connect the drains of the former transistors and the sources of the following transistors to boost the transconductances of the following transistors. Thus, the gain of the circuit is effectively increased. In addition, the noise figure (NF) is decreased because the noise contributions of the following stages are further suppressed by the application of the transformers. To enhance the gain bandwidth, the gate inductor in each inter-stage matching network is independently adjusted to separate the main poles of the four stages. The LNA is demonstrated using a commercial 65-nm CMOS process. According to the measurement results, a maximum gain of 17.7 GHz at 67 GHz and a 3-dB gain bandwidth of 35.6 GHz are achieved. The measured NF is 5.4–7.4 dB at 54–67 GHz. The tested input 1-dB gain compression point (IP $_{1\,\text {dB}}$ ) ranges from −15.4 to −11.7 dBm in the entire 3-dB gain bandwidth. With 1-V power supply, the LNA consumes 19-mA dc current. The chip size is only 0.37 mm2 with all pads.

Design and Optimization of a Milli-Meter Wave Amplifier Using Nano-Scale CMOS Devices

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Miller Effect Analysis and Noise Optimization of CMOS Low Noise Amplifier

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A novel design optimization method of fully integrated CMOS low noise amplifier

Analysis and Design of Wideband Low Noise Amplifier with Digital Control

A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

A BiCMOS Implementation of Noise Canceling Low Noise Amplifier for Wideband Applications

Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS

Optimized Design of Low Power 90 nm CMOS Low Noise Amplifier for 60 GHz Applications

5 GHz LNA based on CHRT 0.18 μm CMOS technology

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Design of 60-Ghz Amplifiers Based on over Neutralization and Optimized Inter-Stage Matching Networks in 65-Nm CMOS

Design of Low-Voltage Low Noise Amplifiers with High Linearity

A 54.4–90 GHz Low-Noise Amplifier in 65-nm CMOS

A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation RF (Radio Frequency) and Millimeter-Wave Applications

Design of a Wideband Low Noise Amplifier for 70-1000Mhz Frequency Range

A Novel CMOS Low-Noise Amplifier Design for 3.1- to 10.6-Ghz Ultra-Wide-band Wireless Receivers

An Optimization Design Methodology for CMOS UWB LNA

A 2.8–10-GHz CMOS Current Reuse Cascaded Linearity Improving Ultra-Wideband Low-Noise Amplifier