Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Emitter-base short issue study and improvement in a low cost and high performance 0.18um SiGe BiCMOS process

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

Si- and Ge-Based Electronic Devices

Influence of In-Situ Arsenic Doped Emitter Poly Process Conditions on RF-BiCMOS Device Parametrics

Design of High Speed PNP Transistor for SiGe BiCMOS Process

Lithography Solutions in Novel High Frequency Sige Hbt Device

Polysilicon Emitter Double Mesa Microwave Power SiGe HBT

High-speed Polysilicon Emitter Bipolar Technologies

Study of unique pseudo buried layer in 0.18um SiGe BiCMOS process

Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers

Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

Ultra High-voltage SiGe HBT with Non-epi Collector

A Novel Double-poly Self-aligned High-voltage Power SiGe HBT

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

SiGe HBT Device in Mixed Dry Wet Etching

Improvement of Er-silicide formation on Si(100) by W capping

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

A Base-Emitter Self-Aligned Multi-Finger Si1-Xgex/Si Power Heterojunction Bipolar Transistor

Lithography Process Optimization for Emitter Window in Sige-Hbt Device