Abstract:Near lattice matched Al0.81In0.19N/GaN heterojunction structures are compared with conventional Al0.3Ga0.7N/GaN heterojunctions in terms of the sheet density and mobility and their dependence on barrier and spacer layer parameters. With the insertion of an AlN spacer, the mobility of both structures is improved dramatically. Self-consistent solution of Poisson-Schrodinger equations was developed in order to determine the band structure and carrier distribution in these GaN based heterostructures in an effort to gain insight into the experimental observations. Surface donor states were included to account for the origin of electrons in 2DEG, which is treated as charge neutralization conditions in the simulation. Also the change in the piezoelectric polarization due to the electromechanical coupling effect, and shift of band gap caused by uniaxial strain were both included in the calculations. The calculated sheet density is close to the measured values, especially for the AlGaN samples investigated, but a notable difference was noted in the AlInN cases. The discrepancy is confirmed to be caused by the existence of a Ga-rich layer on the top of AlN spacer during the growth interruption, which can split the 2DEG into two channels with different mobilities and lower the overall sheet density. When the modifications made necessary by this GaN layer are taken into account in our model for the AlInN barrier case, the calculations match with the experimental data. When the spacer thickness increase from 0.3 to 3 nm, the total sheet density was found to slightly increase experimentally, which agreed with the theoretical prediction.

Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

On the Intrinsic Spacer Layer in Si/SiGe Heterojunction Bipolar Transistor Grown by Ultra High Vacuum Chemical Vapor Deposition

Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

Metamorphic InP/InGaAs Double-Heterojunction Bipolar Transistor Structure Grown on GaAs by Solid Source Molecular Beam Epitaxy

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Emitter-base short issue study and improvement in a low cost and high performance 0.18um SiGe BiCMOS process

A Comparative Study of Silicon Nitride Passivation on InP-based Double Heterojunction Bipolar Transistors (dhbts) with Different Emitter Structures

Current Transport Mechanism In Inp/Inalas/Gaassb/Inp Double Heterojunction Bipolar Transistors

Effects of In 0 . 82 Ga 0 . 18 As / InP Double Buffers Design on the Microstructure of the In 0 . 82 G 0 . 18 As / InP Heterostructure

High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications

Investigation of the Degradation of InGaAs/InP Double HBTs under Reverse Base-Collector Bias Stress

A Comparative Study of Metamorphic Inp/Ingaas Heterojunction Bipolar Transistors (mhbts) Grown by Gas and Solid Source Molecular Beam Epitaxy (Mbe)