Abstract:Abstract In this article, a novel 1200 V SiC super-junction (SJ) MOSFET with a partially widened pillar structure is proposed and investigated by using the two-dimensional numerical simulation tool. Based on the SiC SJ MOSFET structure, a partially widened P-region is added at the SJ pillar region to improve the short-circuit (SC) ability. After investigating the position and doping concentration of the widened P-region, an optimal structure is determined. From the simulation results, the SC withstand times ( SCWT ) of the conventional trench MOSFET (CT-MOSFET), the SJ MOSFET, and the proposed structure at 800 V DC bus voltage are 15 μs, 17 μs, and 24 μs, respectively. The SCWT of the proposed structure increased by 60 % and 41.2 % in comparison with that of the other two structures. The main reason for the proposed structure with an enhanced SC capability is related to the effective suppression of saturation current at the high DC bias conditions by using a modulated P-pillar region. Meanwhile, a good Baliga’s FOM ( BV 2 / R on ) also can be achieved in the proposed structure due to the advantage of the SJ structure. In addition, the fabrication technology of the proposed structure is compatible with the standard epitaxy growth method used in the SJ MOSFET. As a result, the SJ structure with this feasible optimization skill presents an effect on improving the SC reliability of the SiC SJ MOSFET without the degeneration of the Baliga’s FOM .

Performance Improvement by Blanket Boron Implant in the Sigma-Shaped Trench Before the Embedded SiGe Source/Drain Formation for 28-Nm PMOSFET

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI

Single-event burnout resilient design of 4H-SiC MOSFETs through staircase-like buffer layer

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

The Influence of Silicide Technique on the Device Performance for Deep Sub-Micro Pmosfets

Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Impact of Gate–Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

High performance 4H-SiC MOSFET with deep source trench

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

4H-SiC Trench MOSFET Structure with Wrap N-type Pillar for Low Oxide Field and Enhanced Switching Performance

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar