Abstract:The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices.

Improvement of Er-silicide formation on Si(100) by W capping

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate

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Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

Effect of erbium interlayer on nickel silicide formation on Si(100)

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer

Yttrium Silicide Formation and Its Contact Properties on Si(100)

Emitter-base short issue study and improvement in a low cost and high performance 0.18um SiGe BiCMOS process

Silicide Formation with Tungsten Deposited from W-LPCVD; the Role of Back Surface Conditions

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

Surface-Morphology Study of Titanium Silicide Formed on Polycrystalline Silicon

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

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Enhanced Interfacial and Electrical Characteristics of 4H-Sic MOS Capacitor with Lanthanum Silicate Passivation Interlayer

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