Abstract:In this paper, a novel Si interposer for hermetical MEMS oriented System-in-Package application is presented and it is a low stress, scalable platform with a stress releasing function. It's composed of Si posts which are Air-gapped from Si interposer substituting traditional Copper TSVs to function as electrical interconnection paths, re-distribution layer (RDL) and landing pads for chip stacking. Because there's no Coefficient of Thermal Expansion (CTE) mismatch between Air-gapped Si posts with Si substrate and it suffers little thermal stress when it's subjecting to thermal impacts. Furthermore, Air-gapped Si post is able to act not only as a conducting path but also as a free supporting post for chips' mounting on. So, it's able to release stress accumulation between Si interposer and stacking chips and make little influence to the stacking chips with its elastic deformation. With regard to MEMS hermetical SIP based on the proposed Si interposer, challenging issues are identified and addressed and verified with experimental results. Air-gapped Si sample is fabricated and wafer to wafer bonding process with patterned BCB layer is developed for achieving hermetical wafer level package. The stress condition is analyzed by combining the micro-infrared photoelastic imaging results and finite element simulation results. The measured leakage rate of air-gapped Si sample is 10E-10mbar.L/s. These experimental results prove the technical merits and feasibility of the proposed Si interposer application to hermetical MEMS SIP application. © 2016 IEEE.

The development of novel STI spacer in an EPI free SiGe BiCMOS Process

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

Lithography Solutions in Novel High Frequency Sige Hbt Device

Study of unique pseudo buried layer in 0.18um SiGe BiCMOS process

Process Development of Thick Si Interposer for 2.5d Integration of Rf Mems Devices

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Development on Si/SiGe heterojunction bipolar transistors

Current Status and Future Trends of SiGe BiCMOS Technology

Study of Inner Spacer Module Process for Gate All Around Field Effect Transsistors

Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

Fabrication of Nano-Electromechanical Structures Down to 20 nm by Spacer Technology

Nitride Spacer Aided 0.15 Μm AlGaN/GaN HEMT Fabrication with Optimized Gate Patterning Process

Fabrication and Characterization of Low Stress Si Interposer with Air-Gapped Si Interconnection for Hermetical System-in-Package

Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node

Emitter-base short issue study and improvement in a low cost and high performance 0.18um SiGe BiCMOS process

On the Intrinsic Spacer Layer in Si/SiGe Heterojunction Bipolar Transistor Grown by Ultra High Vacuum Chemical Vapor Deposition

SOI Schottky Barrier Tunnelling Transistors Fabricated with Spacer Technology

Siconi Process Applications Study for 28nm Technology Node and Beyond

A novel PIN switch diode integrating with 0.18um SiGe HBT BiCMOS process