Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Current Status and Future Trends of SiGe BiCMOS Technology

Impact of Ge Profile on Main Electrical Characteristics of SiGe

The Development of SiGe HBT Technology and Its Applications in Microwave/RF Communication Systems

Research Progress in Ge-based Advanced Field Effect Transistor Technology

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Si- and Ge-Based Electronic Devices

New Materials for Post-Si Computing: Ge and GeSn Devices

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

III–V/Ge channel MOS device technologies in nano CMOS era

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Silicon Germanium Spins Cellular and Space Communication Networks

High Mobility CMOS Technologies Using III-V/Ge Channels on Si Platform

SiGe2 Technology Advance for the RF Application

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

Silicon Photonic Network-on-chip and Enabling Components

The development of novel STI spacer in an EPI free SiGe BiCMOS Process

Development on Si/SiGe heterojunction bipolar transistors