Abstract:The technology development of micro-nano electronics in global IC industry is summarized and reviewed in the present paper. There are many challenges and opportunities as the innovative devices and materials have gradually been applied to IC manufacture. As ITRS 2011 Roadmap shows that gate length will shrink to 20 nm in 2013, the industry mainstream manufacturing technologies of the nano-electronics seems moving toward the goal. It is well known that the IC technology development basically depends on material science. In Section 2, some new material and process technologies are highlighted, such as strained silicon, high K and metal gate, ultra-low K, 450 mm silicon wafer, and immersion lithography technologies are the foundation of IC manufacture. The process integration for advanced CMOS manufacture technology is discussed in Section 3. As an example, 20 nm process flow scheme is explained and some comparison is made to the precious generation technology. The main process flow difference between 28 nm technology and 20 nm technology is illustrated and some explanations are presented. In Section 4, 3D system packaging technology is introduced. Some preliminary TSV experimental data made by SMIC are shown. It is expected that 3D TSV Wide I/O would eventually be inevitable in 28 nm production and beyond. In Section 5, the research and development of nonvolatile memory are summarized, such as RRAM, PcRAM and MRAM. Some lab experimental and measurement results from SMIC are demonstrated. It is believed that PcRAM, which is relatively mature technology, mass production will probably come up in the mainland in a few years. In Section 6, a couple of new transistor architectures are introduced and some experimental data are demonstrated, such as local SOI and GAA, and some experimental data are shown. Finally, the comments for domestic R&D strategy in IC area are proposed to future IC R&D direction.

Siconi Process Applications Study for 28nm Technology Node and Beyond

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Advanced in situ pre-Ni silicide (Siconi) cleaning at 65nm to resolve defects in NiSix modules

The Study of Shallow Trench Isolation Gap-Fill for 28nm Node and Beyond

Challenges of Process Technology in 32nm Technology Node

5 NM FIN SAQP PROCESS DEVELOPMENT AND KEY PROCESS CHALLENGE DISCUSSION

Novel Devices and Process for 32 Nm CMOS Technology and Beyond

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices

The Status and Trend of Novel Process and Technology in Nano-Ic Manufacturing

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration

Study on self-aligned silicide CMOS/SOI technology

The Investigation of Key Technologies for Sub-0.1-μm CMOS Device Fabrication

Study on Compatible Cmos-Mems Process with Surface Micromachining for the Application of Monolithic Integration

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS