Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.

A New Operation Scheme to Obtain 3-Bit Capacity Per Cell in HfO2 Based RRAM with High Uniformity

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

A Combined Modulation of Set Current with Reset Voltage to Achieve 2-Bit/cell Performance for Filament-Based Rram

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

HfO2-Based RRAM with in Situ Conductive Channels Induced by Nanoparticles to Improve Stability

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Uniform 3d Vertical Alo Delta/Ta2o5-X/Taoy Rram: Fabrication, Characterization And Mechanism Analysis

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM

Uniform 3D vertical AlOδ/Ta2O5−x/TaOy RRAM: Fabrication, characterization and mechanism analysis

Operation-oriented solution to boost key performance of RRAM

Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming