Abstract:Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

A Combined Modulation of Set Current with Reset Voltage to Achieve 2-Bit/cell Performance for Filament-Based Rram

Interface-Induced Two-Step Reset for Filament-Based Multi-Level Resistive Memory

A New Operation Scheme to Obtain 3-Bit Capacity Per Cell in HfO2 Based RRAM with High Uniformity

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Voltage and Power-Controlled Regimes in the Progressive Unipolar Reset Transition of Hfo2-Based Rram

Improved multi-level control of RRAM using pulse-train programming

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

HfO2-Based RRAM with in Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Confirmation Of Filament Dissolution Behavior By Analyzing Electrical Field Effect During Reset Process In Oxide-Based Rram

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

High Performance Multilevel Data Storage in Tatin/Hfox/Pt Based Rram Using Bipolar and Unipolar Combined Switching Mode

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Improved Al2O3 RRAM Performance Based on SiO2/MoS2 Quantum Dots Hybrid Structure

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Impact of program/erase operation on the performances of oxide-based resistive switching memory.