Abstract:The gate-tunable Josephson junction, generally achieved in planar Josephson field-effect transistors (JoFETs), is a key element for the applications of superconducting devices. At present, the performance of these systems with planar JoFETs is often impeded by the large channel length, which, at best, lies in the range of tens of nanometers. In contrast, the channel length in vertical junctions can be easily scaled down to nano-scale to realize the strong Josephson coupling. However, the vertical junctions are believed to be insensitive to the field-effect due to the atomic screening of electric fields in metals. Here, we report on a novel realization of few-layer black phosphorus (BP)-based vertical JoFETs using an electric-double-layer configuration. In transport experiments, using junctions of different shape, superconducting quantum interference device-like magnetic diffraction patterns of the junction critical current and anomalous Shapiro steps on current voltage characteristics are observed, strongly indicating that the critical current density in the junctions is highly inhomogeneous and peaked at the edges or even near the junction corners. The electric-field tunability of the Josephson coupling could be attributed to the edge- or corner-dominated supercurrent density profile combining with the carrier diffusivity in the few-layer BP. The ability to control the vertical Josephson coupling provides us with new opportunities to study high-performance and high-temperature superconducting Josephson field-effect transistors operating on an atomic-scale channel length.

Tunneling Field Effect Transistor Integrated with Black Phosphorus-Mos2 Junction and Ion Gel Dielectric

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

Black Phosphorus Radio-Frequency Transistors

Sub-10 Nm Vertical Tunneling Transistors Based on Layered Black Phosphorene Homojunction

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Vertical Josephson field-effect transistors based on black phosphorus

A Transverse Tunnelling Field-Effect Transistor Made from a Van Der Waals Heterostructure

Theoretical Study of Phosphorene Tunneling Field Effect Transistors

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

High performance tunnel field-effect transistor by gate and source engineering.

High-performance sub-10 nm monolayer black arsenic phosphorus tunneling transistors