Alternative insulation liners for through-silicon vias: A comprehensive review
Miao Tian,Xiaokun Gu
DOI: https://doi.org/10.1016/j.mssp.2023.107726
IF: 4.1
2023-07-13
Materials Science in Semiconductor Processing
Abstract:In contemporary times, 3D integration is acknowledged as the most promising direction for the development of the chip industry. The core technology behind 3D integration is through-silicon via (TSV) structures, which offer vertical electrical interconnection through the dies. The insulation liner is a critical component that guarantees the functioning of TSVs through its strong influence on electrical characteristics and thermal-mechanical reliability. Conventional insulation liners face constant challenges due to the increasingly complex integration and packaging, which involves smaller diameters and higher aspect ratios of TSVs. Consequently, novel insulation liner approaches are continuously explored and tested to meet the stringent requirements. This review provides a comprehensive cross-sectional comparison and summary of the insulation liners, including both conventional methods such as SACVD and PECVD, as well as alternative approaches like ALD, air-gap, vapor-deposited polymers, and wet-deposited polymers. The advantages and disadvantages of each method are discussed based on their specific performance properties, such as conformality, electrical characteristics, and thermal-mechanical reliability, which are critical for the proper functioning of through-silicon via (TSV) structures in 3D integration and chip industry development. This evaluation of the different insulation liners will aid researchers in better comprehending these methods and making informed decisions as per their specific needs and requirements.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied