Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

BORON DIFFUSION IN B-DOPED A-Sic:H/undoped A-Si:H HETEROJUNCTIONS

Study on solid-phase crystallization of B-doped a-Si:H film

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Effect of heavily doping with boron on electronic structures and optical properties of β-SiC

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Investigation of the Doping Failure Induced by Db in the Sinws Using First Principles Method

Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Boron-related defects in n-type 4H-SiC Schottky barrier diodes