Abstract:We report a surface x-ray diffraction study of the structure of In films grown on Si(111)-(7 x 7) and Si(111)-(root 3 x root 3)-In substrates at a low temperature (135 K). The (7 x 7) reconstruction of the clean Si(111) surface is found to persist upon burial by the In. X-ray reflectivity measurements yield patterns that deviate strongly from the ideal case; the results suggest a complex In film structure, possibly distorted by the corrugated interfacial reconstruction. By contrast, In films grown on the Si(111)-(root 3 x root 3)-In surface exhibit reflectivity data that are much closer to the ideal case. The films are found to grow approximately layer by layer, resulting in a relatively small roughness. Upon annealing, the films develop preferred thicknesses at 10, 13, and 16 monolayers (MLs). Previous photoemission studies revealed preferred thicknesses at 4 and 7 MLs. Putting these results together, the preferred thickness sequence, 4, 7, 10, 13, and 16 ML, establishes a trilayer oscillation period. This period is expected from the known electronic structure of In, and arises from quantum confinement of the In valence electrons. This is the second example, after the well-known bilayer period in Pb, which shows quantum oscillations over a wide range of film thickness.

SMALL-ANGLE X-RAY DIFFRACTION STUDY OF AMORPHOUS MULTILAYER AND SINGLE LAYER THIN FILMS

SMALL ANGLE X-RAY DIFFRACTION OF THE SINGLE METAL FILM

Structure and Optical Properties of A-C:H/a-sio X :H Multilayer Thin Films

Precise Calculation of the Periodic-thickness for Multilayer

X-Ray Diffraction Study of Alternating Nanocrystalline Silicon/Amorphous Silicon Multilayers

Determination of the Optical Constants of Solar-Control Amorphous Silicon Thin Films on Float Glass

Structural Studies Of Mo/Si Multilayers By Exafs

A Method of Calculating Interfacial Roughness of Multilayers for Soft X-Ray

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Analysis Of The Thickness Measurement Of Multilayer Optical Thin Films With Grazing Incident X-Ray

XAFS Study on the Microstructure of Mo/Si Multilayers

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

X-ray-diffraction theory of multilayer with no sharp interface

Amorphous Silicon Periodic and Quasiperiodic Superlattices

Analysis of Surface and Interface Modifications of Thin Multilayered Films

Study of Small Angle X-ray-diffraction Theory of Multilayer for Water Window Reign X-ray

Effect Of Thickness Ratio Deviation On Soft-X-Ray Diffraction Of Multilayers

Study On Quasi-Periodic Ta/Al Multilayer Films By X-Ray-Diffraction

Periodic Structure and Quantum Size Effect of μc-Si∶H/a-Si∶H Multilayers

X-ray scattering methods for films and multilayers and their applications