Abstract:Bi2O2Se, 2 O 2 Se, as a non-van-der-waals (non-vdW) interlayer coupling two-dimensional material, its electronic band structures and exciton behavior still merit further in-depth studies, especially in the consideration of thickness tuning degrees of freedom. Here, we reveal the broadband excitonic performance and critical point properties of Bi2O2Se 2 O 2 Se films with different thicknesses (3.54-16.33 nm). Five critical points are determined and assigned to specific optical transitions. Moreover, we observe that electronic bandstructures in the Gamma valley are stable with variable thicknesses, while the deeper electron levels received more pronounced thickness modulation. And we first report four excitons in wide spectral range (1.24-6.20 eV) through absorption coefficient fitting. Significantly, due to the strong localization of electrons and holes induced by the intralayer built-in electric field, the exciton binding energy (Eb) E b ) value of 3.54 nm-Bi2O2Se 2 O 2 Se (234 meV at Gamma position) is apparently larger than typical multi-layer TMDCs, which offering unprecedented opportunities in applications in optoelectronic devices. Furthermore, Eb b of two excitons at low energy region (Eb1, E b 1 , E b 2 ) red-shift with increasing thickness, while Eb b of higher-energy excitons (Eb3, E b 3 , E b 4 ) blue-shift, owing to the dispersion characteristic of the effect dielectric screening effects. Our results are vital to wide-ranging applications of Bi2O2Se 2 O 2 Se from fundamental science to optoelectronic devices.

Effect Of Thickness Ratio Deviation On Soft-X-Ray Diffraction Of Multilayers

X-ray Diffraction of Multilayers with a Systematic Deviation of Period

Observation of Systematic Deviations of Period in W/Si and W/C Multilayers

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Asymmetric Interface and Growth Mechanism in Sputtered W/Si and WSi2/Si Multilayers

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Structural Studies Of Mo/Si Multilayers By Exafs

Microstructure Evolution in Magnetron-Sputtered WC/SiC Multilayers with Varied WC Layer Thicknesses

Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices

Simultaneous Determination of Tensile and Shear Strains of Crystalline Bilayers Using Three Bragg Reflections of X-rays

THE EFFECT OF ANNEALING ON THE X-RAY DIFFRACTION OF W/C PERIODIC MULTILAYERS

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

X-ray standing wave and reflectometric characterization of multilayer structures

XAFS Study on the Microstructure of Mo/Si Multilayers

Evaluating modulus and hardness enhancement in evaporated Cu/W multilayers

Direct Determination of Resonance Phase Shifts of Soft X-Ray Diffraction in Thin Films by Momentum-Transfer-Sensitive Three-Wave Interference

Nondestructive Measurement Of Layer Thickness In Double Heterostructures By X-Ray Double Crystal Diffraction

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Interlayer Microstructure of Sputtered Mo/Si Multilayers

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se 2 O 2 Se Films