Abstract:Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($\delta$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging. Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $\delta$-layers within silicon, and show that the sub-nm electronic thickness of the $\delta$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.

Nondestructive Measurement Of Layer Thickness In Double Heterostructures By X-Ray Double Crystal Diffraction

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Determination of Interatomic Coupling Between Two-Dimensional Crystals Using Angle-Resolved Photoemission Spectroscopy

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Measuring Interface Strains At The Atomic Resolution In Depth Using X-Ray Bragg-Surface Diffraction

Study of double barrier superlattice by synchrotron radiation and double‐crystal x‐ray diffraction

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Element-specific, non-destructive profiling of layered heterostructures

Application of X-Ray Dual Crystal Diffraction in Semiconductor Materials and Structure Analysis

Thickness Measurement of GaN Films by X-ray Diffraction

Composition determination of quaternary GaAsPN layers from single XRD measurement of quasi-forbidden (002) reflection

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers

Energy-Dispersive X-Ray Spectroscopy of Atomically Thin Semiconductors and Heterostructures

THz-TDS Reflection Measurement of Coating Thicknesses at Non-Perpendicular Incidence: Experiment and Simulation

High resolution X-ray diffraction study in InAs/GaSb superlattice

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Determination of the Thickness of Two-Dimensional Transition-Metal Dichalcogenide by the Raman Intensity of the Substrate