Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

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Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Determination of Al Composition in Strained AlGaN Layers

X-ray Studies of As-doped GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

A solid-state NMR and DFT study of compositional modulations in Al x Ga

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

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Nondestructive Measurement Of Layer Thickness In Double Heterostructures By X-Ray Double Crystal Diffraction

Evaluation of Both Composition and Strain Distributions in InGaN Epitaxial Film Using X-Ray Diffraction Techniques

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

In situ determination of indium/gallium composition in In x Ga 1-x nanodroplets on GaAs(1 1 1)A based on the complementarity between XPS and REELS

Photoelectron Diffraction Studies on Semiconductor Surface Structure in NSRL

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Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Method for measurement of lattice parameter of cubic GaN layers on GaAs (0 0 1)

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling