Abstract:X-ray diffraction (XRD) reciprocal space mappings (RSM) were applied to structurally characterize InGaN multi-quantum-wells alloys with V-shape morphology (V-MQWs), epi-grown successively on the rough thick n-InGaN layer by plasma assisted molecular beam epitaxy on c-plane sapphire. In asymmetric (105) RSM, all reciprocal lattice points (RLPs) of satellite peaks have obvious shift to both sides along axis Qx, but the RLP of the zero-order peak diffracted from MQWs locates at the pseudomorphic line, aligning with the n-InGaN layer diffraction peak (substrate peak) along axis Qy. Unlike the shift of satellite peaks caused by partial strain relaxation of MQWs in asymmetric RSM, the abnormal shift in our sample is aroused by the special profiles of interfaces of V-MQWs. According to the x-ray reflectivity of the interfaces of MQWs, the quasi-symmetric V-shape MQWs can be divided into the so-called “high reflection coefficient (HRC)” area and the “high transmission coefficient (HTC)” area. In kinematics of XRD, the satellite peaks from MQWs can be attributed to the diffraction of reflected x-ray by interfaces of MQWs. In that case, the satellite peaks were modified by the interfaces of V-MQWs so that RLPs of satellite peak were contributed by the diffraction of interfaces of MQWs in HRC area, rather than in the HTC area. The zero-order peak from MQWs was still determined by the diffraction from lattice planes both within the HRC and HTC areas.

Evaluation of Both Composition and Strain Distributions in InGaN Epitaxial Film Using X-Ray Diffraction Techniques

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain Distributions in Non-Polar a-Plane InxGa1?xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Thickness Measurement of GaN Films by X-ray Diffraction

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Investigation of InGaN Layer Grown under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Strain And Photoluminescence Characterization Of Cubic (In,Ga)N Films Grown On Gaas(001) Substrates

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

The preparation and characteristics of InxGa1-xN (0.06 ≤ x ≤ 0.58) films deposited by ECR-PEMOCVD

A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films