Abstract:Strain effects on the polarized optical proper-ties of c-plane and m-plane InxGa1-xN were discussed for different In compositions (x = 0, 0.05, 0.10, 0.15) by analyzing the relative oscillator strength (ROS) and energy level splitting of the three transitions related to the top three valence bands (VBs). The ROS was calculated by applying the effective-mass Hamiltonian based on k.p perturbation theory. For c-plane InxGa1-xN, it was found that the ROS of |X > and |Y >-like states were superposed with each other. Especially, under compressive strain, they dominated in the top VB whose energy level also went up with strain, while the ROS of the |Z >-like state decreased in the second band. For m-plane InxGa1-xN under compressive strain, the top three VBs were dominated by |X >, |Z >, and |Y >-like states, respectively, which led to nearly linearly-polarized light emissions. For the top VB, ROS difference between |X > and |Z >-like states became larger with compressive strain. It was also found that such tendencies were more evident in layers with higher In compositions. As a result, there would be more TE modes in total emissions from both c-plane and m-plane InGaN with compressive strain and In content, leading to a larger polarization degree. Experimental results of luminescence from InGaN/GaN quantum wells (QWs) showed good coincidence with our calculations.

Strain Distributions in Non-Polar a-Plane InxGa1?xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Evaluation of Both Composition and Strain Distributions in InGaN Epitaxial Film Using X-Ray Diffraction Techniques

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Crystallization Quality and Optical Properties of High Strain InxGa1-xAs Film

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Strain And Photoluminescence Characterization Of Cubic (In,Ga)N Films Grown On Gaas(001) Substrates

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Strain Effects on the Polarized Optical Properties of Ingan with Different in Compositions

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

High Resolution X-Ray Diffraction Study Of Bragg Peak Width In Strained Ingaas/Inalas/Inp Heterostructures

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy