Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

The Spreading Resistance Method for Measureing Impurity distribution and Junction Depth of Sub 100 nm Deep Base Transistor

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

A Novel Method for Measuring Parasitic Resistance in High Electron Mobility Transistors

Reduction Of Junction Leakage Current In Sub-10 Nm Ultra-Shallow Nige/N-Ge Schottky Junctions By Dopant Segregation

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

A Method for Measuring Resistance of Metal Interconnection Inside Chip

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

The Comparison of Various S/D Series Resistances Methods for Deeply Submicron MOSFETs

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Extraction Of The Intrinsic Base Region Sheet Resistance In Bipolar Transistors

A Procedure for Characterizing the BJT Base Resistance and Early Voltages Utilizing a Dual Base Transistor Test Structure

A New Procedure For Extraction Of Series Resistances For Bipolar Transistors From Dc Measurements

Extraction of Emitter and Base Series Resistances of Bipolar Transistors from a Single DC Measurement

Sub-1 ns characterization methodology for transistor electrical parameter extraction.

Investigation Of Fabricating Ultra Deep And High Aspect Ratio Electrical Isolation Trench Without Void

Profiling the Deep Levels in Sige/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Mathematical and Computer Modeling of the Spreading Resistance Value of the Metal-semiconductor Contact