Abstract:With the growing use of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet in power electronic equipment, it is meaningful to extract precise typical waveforms and characteristics for device manufacture, converter design, and operating evaluation. Many solutions have been proposed to improve measurement precision by equipment and essential techniques. However, the measured object should also be accurately identified as the existing measurement result consisting of the expected gate-source voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v GS ) and voltage drops on parasitic parameters between measuring points. This article, first, reveals the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v GS measurement deviation of TO-247-4 and TO-247-3 devices during the switching process and crosstalk, based on the equivalent circuit model and simulation waveforms. According to the clarification of the measured object, an improved <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v GS extraction method is proposed to eliminate this deviation. Voltage drops on parasitic parameters are compensated, with the help of high-precision equipment and the proven parasitic parameter extraction technique. Experiments are constructed to verify the analysis of measurement deviation and the availability of the proposed method. Comparison between various operating conditions emphasizes its necessity, especially in high-capacity and low-driving-resistor applications, contributing to characterization, operating condition monitoring, protection design, and measurement understanding of wide band-gap devices.

Sub-1 Ns Characterization Methodology for Transistor Electrical Parameter Extraction

Quantitative fitting of nonlinear current-voltage curves and parameter retrieval of semiconducting nanowire, nanotube and nanoribbon devices.

Nano-scaled Transistor Reliability Characterization at Nano-Second Regime

Ultra-Fast (13ns) Low Frequency/Microwave Transient Measurements, Application to GaN Transistors Characterization of Pulse to Pulse Stability

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

Novel Methodology for Fast Model Parameter Extracting Using $q_{\mathrm{g}}$ Waveforms to Accurately Capture Switching Characteristics of SiC MOSFET under Various Load Conditions

Development of a Fast Technique for Characterizing Interface States

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Deep Simple Recurrent Unit-Based Transient Modeling Method for High-Speed Circuits

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Accurate SiC MOSFET Chip Extraction Based on Parasitic Parameter Impact Compensation

Accurate SiC MOSFET Chip Extraction Based on Parasitic Parameter Impact Compensation<italic/><sub/>

Effect of Measurement Speed (Μs-800 Ps) on the Characterization of Reliability Behaviors for FDSOI Nmosfets

Accurate SiC MOSFET Chip V<sub>gs</sub> Extraction Based on Parasitic Parameter Impact Compensation

Ultra Deep Submicron Device Modeling and the Model Parameter Extraction Based Upon the BSIM3

Fast-Trap Characterization In Ge Cmos Using Sub-1 Ns Ultra-Fast Measurement System

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps under DC/ AC NBTI Stress/Recovery Condition in Si P-Finfets

A Fast $V_{th}$ Measurement (FVM) Technique for NBTI Behavior Characterization