Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

A Fast $V_{th}$ Measurement (FVM) Technique for NBTI Behavior Characterization

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Real Vth instability of pMOSFETs under practical operation conditions

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation

An Analysis of the Nbti-Induced Threshold Voltage Shift Evaluated by Different Techniques

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps under DC/ AC NBTI Stress/Recovery Condition in Si P-Finfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Challenge and Solution for Characterizing NBTI-generated Defects in Nanoscale Devices

Fluorine IMP effect on negative bias temperature instability and process induced defects

NBTI-related issues in deep submicron pMOSFETs

Effects of Measurement Temperature on NBTI

A novel negative bias temperature instability model for nanoscale finfet

Comparative Study on NBTI Kinetics in Si P-Finfets with B2H6-based and SiH4-based Atomic Layer Deposition Tungsten (ALD W) Filling Metal

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Effect of Measurement Speed (Μs-800 Ps) on the Characterization of Reliability Behaviors for FDSOI Nmosfets

Sub-1 Ns Characterization Methodology for Transistor Electrical Parameter Extraction

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method