Abstract:In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-based transistors. In this paper, the mechanism of RTN in a 22-nm FDSOI-based metal–oxide–semiconductor field-effect transistor (MOSFET) is discussed, and an improved approach to analyzing the relationship between the RTN time constants, the trap energy, and the trap depth of the device at cryogenic temperatures is proposed. The cryogenic measurements of RTN in a 22-nm FDSOI-based MOSFET were carried out and analyzed using the improved approach. In this approach, the quantum mechanical effects and diffuse scattering of electrons at the oxide–silicon interface are considered, and the slope of the trap potential determined by the gate voltage relation is assumed to decrease proportionally with temperature as a result of the electron distribution inside the top silicon, per the technology computer-aided design (TCAD) simulations. The fitted results of the improved approach have good consistency with the measured curves at cryogenic temperatures from 10 K to 100 K. The fitted trap depth was 0.13 nm, and the decrease in the fitted correction coefficient of the electron distribution proportionally with temperature is consistent with the aforementioned assumption.

A Dual-Point Technique for the Entire ID–VG Characterization into Subthreshold Region under Random Telegraph Noise Condition

Dual-Point Technique for Multi-Trap RTN Signal Extraction.

The Physical Mechanisms of IG Random Telegraph Noise in Deeply Scaled Pmosfets

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Phenomenon and Mechanism Investigation of the Cryogenic Random Telegraph Noise for 18 Nm FDSOI CMOS

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

A Fast and Test-Proven Methodology of Assessing RTN/fluctuation on Deeply Scaled Nano Pmosfets.

Statistical analysis of random telegraph noise in digital circuits

Characterization of Random Telegraph Noise in Scaled High-κ/Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics

Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

Extraction technology of random telegraph noise under complex multi-trap conditions

On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: from Ideal to Statistical Devices

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Investigation on the Amplitude Coupling Effect of Random Telegraph Noise (RTN) in Nanoscale FinFETs

Comprehensive Study on the “anomalous” Complex RTN in Advanced Multi-Fin Bulk FinFET Technology

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing Techniques

The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications

New Insights into Oxide Traps Characterization in Gate-All-around Nanowire Transistors with TiN Metal Gates Based on Combined Ig-Id RTS Technique