Abstract:Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for smaller devices and lower operation voltage. To optimize the circuit design, many efforts have been made to model RTN. RTN is highly stochastic, with significant device-to-device variations (DDVs). Early works often characterize individual traps first and then group them together to extract their statistical distributions. This bottom-up approach suffers from limitations in the number of traps it is possible to measure, especially for the capture and emission time constants, calling the reliability of extracted distributions into question. Several compact models have been proposed, but their ability to predict long-term RTN is not verified. Many early works measured RTN only for tens of seconds, although a longer time window increases RTN by capturing slower traps. The aim of this work is to propose an integral methodology for modeling RTN and, for the first time, to verify its capability of predicting the long-term RTN. Instead of characterizing properties of individual traps/devices, the RTN of multiple devices was integrated to form one dataset for extracting their statistical properties. This allows using the concept of effective charged traps (ECTs) and transforms the need for time constant distribution to obtain the kinetics of ECT, making long-term RTN prediction similar to predicting aging. The proposed methodology opens the way for assessing RTN impact within a window of ten years by efficiently evaluating the probability of a device parameter at a given level.

Dual-Point Technique for Multi-Trap RTN Signal Extraction.

Extraction technology of random telegraph noise under complex multi-trap conditions

Complex Random Telegraph Noise (RTN): What Do We Understand?

A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation

A Dual-Point Technique for the Entire ID–VG Characterization into Subthreshold Region under Random Telegraph Noise Condition

Statistical analysis of random telegraph noise in digital circuits

Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Extracting Statistical Distributions of RTN Originating from Both Acceptor-Like and Donor-Like Traps

An Integral Methodology for Predicting Long-Term RTN

A Simple Method to Identify Metastable States in Random Telegraph Noise (RTN)

An Integrated Method for Extracting the Statistical Distribution of RTN Time Constants

New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

AC RTN: Testing, Modeling, and Prediction

Investigation on the Amplitude Coupling Effect of Random Telegraph Noise (RTN) in Nanoscale FinFETs

Prediction of Trap Occupancy for Random Telegraph Noise under Complex Waveforms

An Electrical Model for Trap Coupling Effects on Random Telegraph Noise

Comprehensive Study on the “anomalous” Complex RTN in Advanced Multi-Fin Bulk FinFET Technology

Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits