Characterizing and Modeling RTN under Real Circuit Bias Conditions
Kean H. Tok,Jian F. Zhang,James Brown,Zhigang Ji,Weidong Zhang,John S. Marsland
DOI: https://doi.org/10.1109/ted.2023.3253665
IF: 3.1
2023-01-01
IEEE Transactions on Electron Devices
Abstract:Random telegraph noise (RTN) has attracted much attention, as it becomes higher for smaller devices. Early works focused on RTN in linear drain current, ${I}_{D,\text {LIN}}$ , and there is only limited information on RTN in saturation current, ${I}_{D,\text {SAT}}$ . As transistors can operate in either linear or saturation modes, lack of RTN model in ${I}_{D,\text {SAT}}$ prevents modeling RTN for real circuit operation. Moreover, circuit simulation requires both driving current and threshold voltage, ${V}_{\text {TH}}$ . A common practice of early works is to evaluate the RTN in ${V}_{\text {TH}}$ by $\Delta {V}_{\text {TH}}= \Delta {I}_{D,\text {LIN}}/{g}_{m}$ , where ${g}_{m}$ is the transconductance. It has been reported that the $\Delta {V}_{\text {TH}}$ evaluated in this way significantly overestimates the real $\Delta {V}_{\text {TH}}$ , but there is little data for establishing the cumulative distribution function (CDF) of the real $\Delta {V}_{\text {TH}}$ . An open question is whether $\Delta {V}_{\text {TH}}$ and $\Delta {I}_{D,\text {LIN}}/{I}_{D,\text {LIN}}$ follow the same CDF. The objectives of this work are threefold: to provide statistical test data for RTN in ${I}_{D,\text {SAT}}$ ; to measure the RTN in real $\Delta {V}_{\text {TH}}$ by pulse ${I}_{D}$ – ${V}_{G}$ ; and, for the first time, to apply the integral methodology for developing the CDF per trap for all four key parameters needed by circuit simulation— $\Delta {I}_{D,\text {LIN}}/{I}_{D,\text {LIN}}$ , $\Delta {I}_{D,\text {SAT}}/{I}_{D,\text {SAT}}$ , $\Delta {V}_{\text {TH, LIN}}$ , and $\Delta {V}_{\text {TH, SAT}}$ . It is found that the log-normal CDF is the best for $\Delta {I}_{D,\text {LIN}}/{I}_{D,\text {LIN}}$ and $\Delta {I}_{D,\text {SAT}}/{I}_{D,\text {SAT}}$ , while the general extreme value CDF is the best for $\Delta {V}_{\text {TH, LIN}}$ and $\Delta {V}_{\text {TH, SAT}}$ . Both $\Delta {I}_{D,\text {SAT}}/{I}_{D,\text {SAT}}$ and $\Delta {V}_{\text {TH, SAT}}$ are higher than their linear counterparts and separate modeling is required. Finally, the applicability of integral methodology in predicting the long term $\Delta {I}_{D,\text {LIN}}/{I}_{D,\text {LIN}}$ is demonstrated.