Abstract:With the development of integrated circuits, the size of devices decreases, which leads to the increase of traps in MOSFET gate oxide layer. The generated low frequency noise, especially Random Telegraph Noise（RTN）, becomes more and more obvious, which challenges the reliability of devices. When there are more than one trap in the device, the coupling effect between traps also has an important influence on the analysis of RTN signals. Therefore, it is particularly urgent to carry out research on RTN signal extraction technology in complex and multi-trap situations. At present, the existing RTN extraction technology consumes a lot of time when processing large amounts of data, and the degree of automation is not high. These problems need to be solved urgently. In this paper, based on the non-Gaussian property of RTN signal, an automatic detection method of RTN signal and an automatic detection method of trap number are proposed, which makes the extraction of RTN signal more accurate and efficient. In addition, this paper also proposes an adaptive model for important parameters in the iterative process, and realizes the iterative acceleration of most RTN signal extraction. Finally, the method is used to extract parameters of the measured RTN signal, and the influence of coupling effect on the parameters is analyzed.

Deep Learning-Assisted Trap Extraction Method from Noise Power Spectral Density for MOSFETs

Simulation study of trap-induced noise characteristics in FDSOI MOSFETs

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Investigation of Traps at MoS2/Al2O3Interface in Nmosfets by Low-Frequency Noise

Extraction technology of random telegraph noise under complex multi-trap conditions

A Unified Approach For Trap-Aware Device/Circuit Co-Design In Nanoscale Cmos Technology

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Dual-Point Technique for Multi-Trap RTN Signal Extraction.

Simulation of Trap-Induced Noise Characteristics in 3-Nm Complementary FET

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model

A New Method of Studying on the Dynamic Parameters of Bulk Traps in Thin SiO2 Layer of MOS Structures

Prediction of Trap Occupancy for Random Telegraph Noise under Complex Waveforms

Deep Learning-Based BSIM-CMG Parameter Extraction for 10-nm FinFET

Identification of MOSFET Working State Based on the Stress Wave and Deep Learning

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

Deep Insights into Low Frequency Noise Behavior of Tunnel FETs with Source Junction Engineering

One-by-one trap activation in silicon nanowire transistors