Abstract:In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter extraction is performed manually by dividing the complete set of parameters into smaller subsets, each targeting different operational regions of the device, a process that can take several days or weeks. Our approach streamlines this process by employing derivative-free optimization to identify a good parameter set that best fits the compact model without performing an exhaustive number of simulations. We further enhance the optimization process to address three critical issues in device modeling by carefully choosing a loss function that focuses on relative errors rather than absolute errors to ensure consistent performance across different orders of magnitude, prioritizes accuracy in key operational regions above a specific threshold, and reduces sensitivity to outliers. Furthermore, we utilize the concept of train-test split to assess the model fit and avoid overfitting. We demonstrate the effectiveness of our approach by successfully modeling a diamond Schottky diode with the SPICE diode model and a GaN-on-SiC HEMT with the ASM-HEMT model. For the latter, which involves extracting 35 parameters for the ASM-HEMT DC model, we identified the best set of parameters in under 6,000 trials. Additional examples using both devices are provided to demonstrate robustness to outliers, showing that an excellent fit is achieved even with over 25% of the data purposely corrupted. These examples demonstrate the practicality of our approach, highlighting the benefits of derivative-free optimization in device modeling.

Deep Learning-Based BSIM-CMG Parameter Extraction for 10-nm FinFET

A Novel Physics Aware ANN-Based Framework for BSIM-CMG Model Parameter Extraction

A Neural Network Based Fast Parameter Extraction of Compact Hot Carrier Degradation Model in FinFETs

Fast Simulated Diffusion - an Optimization Algorithm for Multi-Minimum Problems and Its Application to Mosfet Model Parameter Extraction

iPREFER: An Intelligent Parameter Extractor based on Features for BSIM-CMG Models

Parameter Extraction Of Bsim Based On S(3)Theory

Ultra Deep Submicron Device Modeling and the Model Parameter Extraction Based Upon the BSIM3

Machine Learning-Based Device Modeling and Performance Optimization for FinFETs

ResNet Modeling for 12 nm FinFET Devices to Enhance DTCO Efficiency

Modeling Nanoscale FinFET Performance by a Neural Network Method

Modeling nanoscale MOSFETs by a neural network approach

An Accurate Parameter Extraction Method for RF LDMOSFET Small-Signal Model

Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET

Deep Learning Algorithm for Advanced Level-3 Inverse-Modeling of Silicon-Carbide Power MOSFET Devices

A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models

Calibration of Drift-Diffusion Model in Quasi-Ballistic Transport Region for FinFETs.

A new small-signal parameter extraction approach for SOI MOSFET

MOSFET Parameters Extraction in VDSM ULSI CAD with a Parallel-Programming Strategy

Compact Model Parameter Extraction via Derivative-Free Optimization

A BSIM SOI Model Parameter Extraction Method for SOI MOSFETs Based on PSO