Abstract:An optimal design of semiconductor device and its process uniformity are critical factors affecting desired figure-of-merits as well as reducing fabrication cost of fixing possible malfunctioning in semiconductor manufacturing. Two main tasks in optimal device design for semiconductor manufacturing, i.e., parameter optimization and modeling, have been typically used either to characterize the devices by understanding how each parameter affects the device performances or to calibrate the parameters for SPICE circuit simulation. However, there still remains limitations in describing the relationship between all manufacturing parameters and figure-of-merits using several simple equations human experts can utilize. Even with the best model currently available, the optimal design of semiconductor device heavily relies on experiences of human experts and deals with time-consuming ad-hoc trials and non-holistic approaches. In this paper, we propose a new approach for data-based accurate electrical modeling of transistor, which is the most fundamental unit device of semiconductor, and fast optimization of its manufacturing parameters. Instead of the previous analytic approaches, finding finite equations derived from semiconductor physics, we utilize machine learning technique and neural networks to find appropriate modeling functions from data pairs of parameters and figure-of-merits. And for given desired figure-of-merits, we find optimal manufacturing parameters in holistic manner by using the learned functions of neural networks and fast gradient-based optimization method. Experimental results show that our neural-network-based-model directly estimate figure-of-merits with competitive accuracy and that our holistic optimization technique accurately and rapidly adapts the manufacturing parameters to meet desired figure-of-merits.

Modeling nanoscale MOSFETs by a neural network approach

Neural Network Method to Model Nanoscale Mosfet Characteristics

Modeling Nanoscale FinFET Performance by a Neural Network Method

Advanced MOSFET Model Based on Artificial Neural Network

MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors

Tiny Neural Network Representing Mosfet Physical Effect Sub-Model

A New Compact MOSFET Model Based on Artificial Neural Network with Unique Data Preprocessing and Sampling Techniques.

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing

Modeling of CMOS Transistors from 0.18 Μm Process by Artificial Neural Network

Artificial Neural Network Based CNTFETs Modeling

Statistically Modeling I–V Characteristics of CNT-FET with LASSO

Neural Network Assisted Si-on-Nothing MOSFET Current-Voltage Modeling with Incremental Learning

Compensated Neural Network Training Algorithm with Minimized Training Dataset for Modeling the Switching Transients of SiC MOSFETs

A New Compact Z$^{\text{2}}$-FET Model Based on Artificial Neural Network and Its Applications

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

Artificial Neural Network Compact Modeling Methodology for Complementary Field Effect Transistor

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs