Artificial Neural Network Compact Modeling Methodology for Complementary Field Effect Transistor

Ouwen Tao,Xiaona Zhu,Yage Zhao,Rongzheng Ding,Shaofeng Yu,Ye Lu
DOI: https://doi.org/10.1109/cstic58779.2023.10219274
2023-01-01
Abstract:Device compact model (DCM) is the key bridge between process technology and circuit design. Conventional DCM requires detailed understanding of device structure and its corresponding physics for underline devices. And This is particularly difficult for complementary field effect transistor (CFET) due to entangled pair device in a stacked structure. We develop a novel artificial neural network (ANN)-based modeling methodology for CFET cells instead of individual transistor to overcome this obstacle. The created model captures the CFET electrical characteristics accurately with fast turnaround time. The standard cells and various logic circuits are simulated and studied based on the new model.
What problem does this paper attempt to address?