Abstract:Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits.

Calibration of Drift-Diffusion Model in Quasi-Ballistic Transport Region for FinFETs.

Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime

Parameter Calibration of Drift-Diffusion Model in Quasi-Ballisitc Transport Region with Monte Carlo Method

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

A Systematic Approach for Hydrodynamic Model Calibration in the Quasi-Ballistic Regime

A novel experimental investigation on scalable model for on-chip GaAs MESFETs

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection

An efficient model algorithm for two-dimensional field-effect transistors

A 3D Charge Model for FinFETs with Ballistic Transport

2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs

Investigations on the Physical Understanding of Mobility in MOSFETs - from Drift-Diffusion to Quasi-Ballistic

Influence of Gate-Source/Drain Misalignment on the Performance of Bulk Finfets by A 3d Full Band Monte Carlo Simulation

Three-Dimensional Monte Carlo Simulation of Bulk Fin Field Effect Transistor

Full Geometric Simulation of Miniaturized GaN Double-Heterojunction High Electron Mobility Transistors by a Multiscale Approach Coupling Quantum and Semi-Classical Transport

Modeling, Simulation and Performance Analysis of Drain Current for Below 10 nm Channel Length Based Tri-Gate FinFET

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation