Abstract:Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits.

A 3D Charge Model for FinFETs with Ballistic Transport

2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

A Qusi-3D Model for a FinFET Device Based on the NEGF Method

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

Analytical Model of Channel Electric Field Profile in Finfet

An Analytical Charge Model for Double-Gate Tunnel FETs

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

3-D Analytical Model for Short-Channel Triple-Gate Junctionless MOSFETs

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Modeling of Ballistic Monolayer Black Phosphorus MOSFETs

Calibration of Drift-Diffusion Model in Quasi-Ballistic Transport Region for FinFETs.

An efficient model algorithm for two-dimensional field-effect transistors

Analytical Models for Channel Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Triple-Gate FinFETs

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Scaling Theory for FinFETs Based on 3-D Effects Investigation