Abstract:Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for smaller devices and lower operation voltage. To optimize the circuit design, many efforts have been made to model RTN. RTN is highly stochastic, with significant device-to-device variations (DDVs). Early works often characterize individual traps first and then group them together to extract their statistical distributions. This bottom-up approach suffers from limitations in the number of traps it is possible to measure, especially for the capture and emission time constants, calling the reliability of extracted distributions into question. Several compact models have been proposed, but their ability to predict long-term RTN is not verified. Many early works measured RTN only for tens of seconds, although a longer time window increases RTN by capturing slower traps. The aim of this work is to propose an integral methodology for modeling RTN and, for the first time, to verify its capability of predicting the long-term RTN. Instead of characterizing properties of individual traps/devices, the RTN of multiple devices was integrated to form one dataset for extracting their statistical properties. This allows using the concept of effective charged traps (ECTs) and transforms the need for time constant distribution to obtain the kinetics of ECT, making long-term RTN prediction similar to predicting aging. The proposed methodology opens the way for assessing RTN impact within a window of ten years by efficiently evaluating the probability of a device parameter at a given level.

An Electrical Model for Trap Coupling Effects on Random Telegraph Noise

Complex Random Telegraph Noise (RTN): What Do We Understand?

New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

Prediction of Trap Occupancy for Random Telegraph Noise under Complex Waveforms

Modeling Random Telegraph Noise As A Randomness Source and Its Application in True Random Number Generation

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: from Ideal to Statistical Devices

Statistical analysis of random telegraph noise in digital circuits

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Methodology of Statistical RTS Noise Analysis with Charge-Carrier Trapping Models.

Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

Investigation on the Amplitude Coupling Effect of Random Telegraph Noise (RTN) in Nanoscale FinFETs

An Integral Methodology for Predicting Long-Term RTN

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

AC RTN: Testing, Modeling, and Prediction

Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

New Understanding of State-Loss in Complex Rtn: Statistical Experimental Study, Trap Interaction Models, and Impact on Circuits

On the AC Random Telegraph Noise (RTN) in MOS Devices: an Improved Multi-Phonon Based Model

Dual-Point Technique for Multi-Trap RTN Signal Extraction.

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants.