Abstract:Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for smaller devices and lower operation voltage. To optimize the circuit design, many efforts have been made to model RTN. RTN is highly stochastic, with significant device-to-device variations (DDVs). Early works often characterize individual traps first and then group them together to extract their statistical distributions. This bottom-up approach suffers from limitations in the number of traps it is possible to measure, especially for the capture and emission time constants, calling the reliability of extracted distributions into question. Several compact models have been proposed, but their ability to predict long-term RTN is not verified. Many early works measured RTN only for tens of seconds, although a longer time window increases RTN by capturing slower traps. The aim of this work is to propose an integral methodology for modeling RTN and, for the first time, to verify its capability of predicting the long-term RTN. Instead of characterizing properties of individual traps/devices, the RTN of multiple devices was integrated to form one dataset for extracting their statistical properties. This allows using the concept of effective charged traps (ECTs) and transforms the need for time constant distribution to obtain the kinetics of ECT, making long-term RTN prediction similar to predicting aging. The proposed methodology opens the way for assessing RTN impact within a window of ten years by efficiently evaluating the probability of a device parameter at a given level.

A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation

Extraction technology of random telegraph noise under complex multi-trap conditions

OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits.

Dual-Point Technique for Multi-Trap RTN Signal Extraction.

An Integral Methodology for Predicting Long-Term RTN

ROPNN: Detection of ROP Payloads Using Deep Neural Networks

Statistical analysis of random telegraph noise in digital circuits

A Simplified Method for RTN Assessment and Novel Understanding on AC RTN

Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

An Integrated Method for Extracting the Statistical Distribution of RTN Time Constants

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Prediction of Trap Occupancy for Random Telegraph Noise under Complex Waveforms

Complex Random Telegraph Noise (RTN): What Do We Understand?

AC RTN: Testing, Modeling, and Prediction

A Simple Method to Identify Metastable States in Random Telegraph Noise (RTN)

Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: from Ideal to Statistical Devices

Extracting Statistical Distributions of RTN Originating from Both Acceptor-Like and Donor-Like Traps

Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

Methodology of Statistical RTS Noise Analysis with Charge-Carrier Trapping Models.