Abstract:Low-power circuits are important for many applications, such as Internet of Things. Device variations and fluctuations are challenging their design. Random telegraph noise (RTN) is an important source of fluctuation. To verify a design by simulation, one needs assessing the impact of fluctuation in both driving current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {I}_{d}$ </tex-math></inline-formula> and threshold voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\textsf {th}}$ </tex-math></inline-formula> . Many early works, however, only measured RTN-induced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {I}_{d}$ </tex-math></inline-formula> . <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\textsf {th}}$ </tex-math></inline-formula> was not directly measured because of two difficulties: its average value is low and it is highly dynamic. Early works often estimated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\textsf {th}}$ </tex-math></inline-formula> from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {I}_{d}/{g}_{m}$ </tex-math></inline-formula> ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{g} = {V}_{\textit {dd}}$ </tex-math></inline-formula> ), where <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{m}$ </tex-math></inline-formula> is the transconductance, without giving its accuracy. The objective of this paper is to develop a new Trigger-When-Charged (TWC) technique for directly measuring the RTN-induced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\textsf {th}}$ </tex-math></inline-formula> . By triggering the measurement only when a trap is charged, measurement accuracy is substantially improved. It is found that there is a poor correlation between <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {I}_{d}/{g}_{m}$ </tex-math></inline-formula> ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{g} = {V}_{\textit {dd}}$ </tex-math></inline-formula> ) and the directly measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\textsf {th}}$ </tex-math></inline-formula> ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{g} = {V}_{\textsf {th}}$ </tex-math></inline-formula> ). The former is twice of the latter on average. The origin for this difference is analyzed. For the first time, the TWC is applied to evaluate device-to-device variations of the directly measured RTN-induced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\textsf {th}}$ </tex-math></inline-formula> without selecting devices.

A Simplified Method for RTN Assessment and Novel Understanding on AC RTN

AC RTN: Testing, Modeling, and Prediction

An Integral Methodology for Predicting Long-Term RTN

Dual-Point Technique for Multi-Trap RTN Signal Extraction.

On the AC Random Telegraph Noise (RTN) in MOS Devices: an Improved Multi-Phonon Based Model

Complex Random Telegraph Noise (RTN): What Do We Understand?

A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation

On the Statistical Trap-Response (STR) Method for Characterizing Random Trap Occupancy and NBTI Fluctuation

Extracting Statistical Distributions of RTN Originating from Both Acceptor-Like and Donor-Like Traps

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

New Efficient Method For Characterizing Time Constants Of Switching Oxide Traps

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math></inline-formula>

Extraction technology of random telegraph noise under complex multi-trap conditions

New Understanding of State-Loss in Complex Rtn: Statistical Experimental Study, Trap Interaction Models, and Impact on Circuits

An Integrated Method for Extracting the Statistical Distribution of RTN Time Constants

Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

A Simple Method to Identify Metastable States in Random Telegraph Noise (RTN)

A Fast and Test-Proven Methodology of Assessing RTN/fluctuation on Deeply Scaled Nano Pmosfets.

Prediction of Trap Occupancy for Random Telegraph Noise under Complex Waveforms

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Study of microscopic mechanisms in HAT-CN/NPB interface devices under consideration of trap action