Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

On the Origin of Frequency Dependence of Single-Trap Induced Degradation in Ac Nbti

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si P-Finfets

On the Statistical Trap-Response (STR) Method for Characterizing Random Trap Occupancy and NBTI Fluctuation

Impacts of metastable defect states on gate oxide trapping in nanoscale MOS devices

New Understanding on the Single-Trap Response under NBTI Stress and the Resulted Stochastic Degradation in Nanoscale MOSFETs

New Observations on AC NBTI Induced Dynamic Variability in Scaled High-Κ/metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

NBTI degradation in STI-based LDMOSFETs.

Understand NBTI Mechanism by Developing Novel Measurement Techniques

On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding Based on Complete 4-State Trap Model

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Towards The Systematic Study Of Aging Induced Dynamic Variability In Nano-Mosfets: Adding The Missing Cycle-To-Cycle Variation Effects Into Device-To-Device Variation

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology