Abstract:A difference analysis method has been presented to separate and characterize interface and oxide traps generated in the metal–oxide–semiconductor structure under Fowler–Nordheim stress. The oxide trap relaxation measurement has been performed in dynamic voltage mode. For a high constant voltage stress condition, the effective oxide traps can be obtained by the difference Fowler–Nordheim current relaxation characteristics. For a low-voltage condition, the interface and effective oxide traps can be separated and determined by the difference subthreshold voltage relaxation characteristics. Using combined difference Fowler–Nordheim current and subthreshold voltage measurements, the density, centroid, and generation/capture cross section of the oxide traps can be obtained without the double current–voltage technique, thus permitting more accurate and quick measurement of the generated oxide traps. All difference Fowler–Nordheim current and subthreshold voltage versus the electron-fluence characteristics exhibit spectrum features. Analytical expressions for computing the interface and oxide traps have been derived and experimental results have been presented for a Fowler–Nordheim tunnel metal–oxide–semiconductor structure. Two interface and two oxide traps generated at Fowler–Nordheim stress have been obtained by the new technique.

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