The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications

Yichao Sun,Peng Lu,Yue Ma,Chenrui Zhang,Zhengsheng Han,Bo Li

DOI: https://doi.org/10.1109/led.2024.3362986

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:In this letter, the random telegraph noise (RTN) in 25-nm-physical-channel-length gate-all-around field effect transistors (GAA FETs) are thoroughly investigated. Electrical characterizations at cryogenic condition (10 K) indicate that the drain bias ( ${V}_{{\textit {DS}}}$ ), which has little impact on the RTN in long-channel transistors, can strongly affect that in ultra-scaled devices. An increase of 0.15 V in ${V}_{{\textit {DS}}}$ led to a $\sim 10\times $ enlargement of the statistical high-state time constant ( $\tau _{c}$ ) together with a ~20x reduction of the statistical low-state time constant ( $\tau _{e}$ ), which could be attributed to the more pronounced drain fringing field in short-channel devices. More significantly, because the drain fringing field counteracts the gate electric field, the $\Delta ~{V}_{{\textit {DS}}}$ -induced $\tau _{c}$ and $\tau _{e}$ variation trends are contrary to those caused by the gate bias. An analytical model, which captures the non-uniform electric field profile in short-channel devices, has been developed for quantitative RTN analysis. Single-level traps close to the channel/drain junction are found to be the major contributor to the RTN, providing guidance for future process optimization.

engineering, electrical & electronic