Abstract:We report systematic investigations on hot-electron degradation in GaN-based HEMTs with different gate recess depths, d r , fabricated by reactive ion etching. The experimental data stipulate two different mechanisms underlying the hot-electron degradations of the devices. During the initial phase of hot-electron injection significant changes were observed in the dc characteristics of the devices and the flicker noise power spectral density, SV(f).The degradations were partially recovered by annealing the devices at 100°C for 20 minutes. It is shown that for stress time ts≤25 hours the reverse bias gate current, IG, decreases systematically with ts, whereas SV(f) fluctuates randomly. Detailed analyses of SV(f) measured over a wide range temperatures show that the initial degradations originate from the percolation of carriers in the 2DEG. The significant increase in the flicker noise during the initial phase of high-voltage stress is due to the generation of H+ at the AlGaN/GaN interface. The fluctuations in the magnitudes of SV(f) for ts≤25 hours originate from the motion of the H+ in the direction of the electric field. This results in the modulation of the percolation path leading to significant variations in SV(f) as a function of ts. For ts>25 hours both IG and SV(f) are stabilized resulting from the drifting of the H+ away from the gate region. Further stressing beyond 25 hours indicate strong dependencies of the device lifetimes on dr suggesting significant material degradation due to the reactive ion etching process for the fabrication of the gate recesses. Detailed characterization of the noise show that the final irreversible degradation is due to the generation of traps at the AlGaN/GaN interface.

Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Hot-Electron Energy Relaxation Time in Alinn/Aln/Gan 2deg Channels

Characterization of 1/f Noise in GaN-based HEMTs under High Dc Voltage Stress (invited Paper)

Effect of Hot Phonon Lifetime on Electron Velocity in Inaln/Aln/Gan Heterostructure Field Effect Transistors on Bulk Gan Substrates

Hot-electron Transient Transport in GaAs-AlGaAs Heterosystems with Finite Proton Relaxation Times

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Hot‐electron Drift Velocity and Hot‐phonon Decay in AlInN/AlN/GaN

High Speed Transient Thermal Simulation of GaN HEMT Devices

Energy Relaxation by Warm Two-Dimensional Electrons in A Gan/Algan Heterostructure

Transient hot-electron transport in GaAs with a Γ-L-X band structure

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

Low-Frequency Noise Characterization of Hot-Electron Degradation in Gan-Based Hemts

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Threshold Voltage Recovery Time Measurement Technique Post VTH Instability in Normally-Off p-Gate GaN High Electron Mobility Transistors

Numerical Calculation of THz Emission of a GaN HEMT Using Coupled Hydrodynamic-Maxwell Equations

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages

Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs