Abstract:Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging self-heating. In this study, self-heating in AlGaN/GaN HEMTs on high conductivity substrates is assessed using a high-resolution thermoreflectance (TR) imaging technique, to compare the thermal response between GaN-on-Si, GaN-on-Diamond, and GaN-on-4H-SiC. The TR method accuracy at high-power density is verified using a nonlinear coefficient of TR ( ${C}_{text {TR}}$ ) as a function of temperature. The acquired steady-state thermal maps give a thermal resistance of $11.5~text {mm} cdot text {K/W}$ for GaN-on-Si (based on peak channel temperature), compared to 2.7 and $3.3~text {mm} cdot text {K/W}$ for GaN-on-SiC and GaN-on-diamond substrates, respectively. The tested GaN-on-diamond HEMT exhibits similar heating rates to those seen on a SiC substrate, with a slightly higher peak temperature, which indicates a higher thermal boundary resistance that could offset the benefits of using a higher conductivity substrate and lead to faster thermally enhanced degradation. The analysis reveals the importance using high-resolution imaging to detect hotspots and areas of peak temperature that largely affect failure initiation and device reliability and which may not be otherwise observable.

Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

A Temperature Analysis of High-power AlGaN/GaN HEMTs

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation