Abstract:The metal Al is commonly attached to external circuits as the source and drain in GaN-based field effect transistors, so profound comprehension of the energy transfer between electrons and phonons in Al/GaN is crucial for nanofabrication and thermal management of electronic devices. Time-domain thermoreflectance (TDTR) is an effective technique for measuring the strength of non-equilibrium electron-phonon (e-ph) coupling. The two-temperature model (TTM) is widely employed in conjunction with TDTR methods to determine electron-phonon coupling factors. However, TTM is a gray method and cannot take into account interactions between electrons and different phonon modes. Therefore, in this work, we use the TDTR technique to analyze the non-equilibrium transport properties of pure Al, the thickness dependence of the e-ph coupling with Al nanofilms, and the coupling strengths of high-energy electrons excited by femtosecond lasers with different modes of phonons are obtained in conjunction with MTM. The results show that the e-ph coupling coefficients of Al nanofilms on GaN substrates are larger than those of pure Al. In conjunction with the TTM, we determined the coupling strength between high-energy electrons excited by femtosecond laser pulses and various phonon modes. Compared to the transverse acoustic branch-1 (TA1) and transverse acoustic branch-2 (TA2) modes, the longitudinal acoustic (LA) phonon mode of Al exhibits a higher e-ph coupling factor. This suggests that the LA mode predominates in the electron relaxation process after ultrafast femtosecond laser excitation. This study provides experimental and theoretical guidance for laser processing and electronic device design.

Energy Relaxation by Warm Two-Dimensional Electrons in A Gan/Algan Heterostructure

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Electron energy relaxation mechanism in n-type In x Ga 1-x As 1-y Bi y alloys under electric and magnetic fields

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Nonequilibrium electron-phonon coupling across the interfaces between Al nanofilm and GaN

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Spectral Broadening and Population Relaxation in A Gaas Interfacial Quantum Dot Ensemble and Quantum Well Nanostructure

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Observation of Hot Electron Relaxation in GaAs/AlGaAs Multiple Quantum Wells by Excitation Spectroscopy

Quasiadiabatic Electron Transport in Room Temperature Nanoelectronic Devices Induced by Hot-Phonon Bottleneck

Hot Electron Dynamics in Zincblende and Wurtzite GaN

Determining energy relaxation length scales in two-dimensional electron gases

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

The Current Collapse In Algan/Gan High-Electron Mobility Transistors Can Originate From The Energy Relaxation Of Channel Electrons?

Scattering Behaviour of A Two-Dimensional Electron Gas Induced by Al Composition Fluctuation in Alxga1-Xn Barriers in Alxga1-Xn/Gan Heterostructures

Electronic Cooling in Graphene